Chungcheongnam-do

The top leader of the Korean semiconductor industries, Samsung. In Sept., Samsung Electronics developed 16Gb NAND Flash memory with a 50 nano process technique. The memory card of 32G bites, half a size of business card, manufactured by combining 16Gb chips, is the next generation semiconductor that can store two million newspapers, 8,000 MP3 music, or 40 thousand books.
Samsung will massproduce the chips from 2006. This makes the company widen its technical differential with its competitors such as Toshiba by more than one year.
Through this technical development, Samsung has doubled the integrated capacity of semiconductors every year for the past six years straight, starting from 1999 with the 256Mb chip the first in the world then. In particular, the development has made a great contribution to the reduction of circuit line width on semiconductor chips by overcoming the 50 nano barrier, which was considered a technical limit in the past, when it was introduced the 100 nano chips in the 2001 the first in the world then.
It has taken 30 years for Samsung to grow up as a manufacturer of this semiconductors of worldwide top class level. The history of Samsung Semiconductors is a challenging history with the company battling against the technical barriers of U.S.A. and Japan.

Lead the DRAM Market in the World
In 1983, when Chairman Lee Byeong-cheol (deceased) pronounced through his ‘Tokyo Declaration’ that Samsung would make inroads into the semiconductor industry, it was practically the beginning of semiconductor development in the company. The technical development team for 64K DRAM was organized and then has succeeded in developing it during the development period of six months in Dec. 1983, through which Korea became the third country following U.S.A. and Japan to possess the VLSI grade semiconductor technique in the world.
Ten years later, Samsung developed 64M DRAM the first in the world. In a continuation of the 64M DRAM development, Samsung succeeded in developing again the 256M DRAM in Aug. 1994. This was what competitors in U.S.A. or Japan never dreamed. Samsung which had conquered the worldwide DRAM market was positioned in the first place in memory in 1993, then the first place in SRAM in 1995, and now has solidified its places even further.

Flash Memory Applied to Nano Technology
After the development of the 256M NAND Flash memory in 1999, the successful development of the 16G NAND Flash memory in 2005 applied the 50 nono technology that was made possible by the manufacture of memory cards for mobiles, which allow the IT industry to convert from existing PCs into mobile devices and digital home appliances based on Flash memories.
President Hwang Chang-gyu said, “One will store all to hear and watch for a week into a 32G card in 2010, when it will be possible to save all his memories into the Flash memory except for the creative ideas and matters concerning family and relatives.” He predicted a change of our lives caused by the Flash memory.

Installing Critical Equipment at a New LCD Production Line, Line 7-2, at the Tangjeong Complex
Samsung, the world’s largest provider of thin-film transistor liquid crystal display (TFT-LCD) panels, announced in August that it is accelerating its plans to standardize 40″and 46″LCD panels for the mass TV market. Rallying behind the 40″and 46″sizes, Samsung will begin installing critical equipment at a new LCD production line, Line 7-2, to produce a glass substrate identical to the one at its nearby joint venture (S-LCD) production facility with Sony Corporation.
With its embrace of 40″and 46″LCD TV sizes, Samsung is well positioned to provide a stable supply for its growing customer base, which demands high-quality, large LCD TV panels at very competitive price points. The company plans to begin mass production at Line 7-2, optimized for 40″and 46″LCD TV panels, in April 2006.
The new line, which will cost approximately one trillion won ($975 million) to build, consists of a FAB facility area of 90,000 pyeong (300,000 sq. meters) and a module facility area of 28,000 pyeong (93,000 sq. meters) at the Tangjeong complex

Plans to Construct an Advanced Future Industrial Complex at Tangjeong in Asan
Samsung Electronics has set the goal to achieve an accumulated sales KRW 200 trillion in semiconductors by 2010 through investing a total amount of KRW 25 trillion in the new semiconductor lines.
Factories of Samsung Semiconductor are currently located in Asan in Chungnam, in Giheung and Suwon in Gyeonggi Province, and in Gumi in Gyeongbuk Province. Especially the factory in Asan in Chungnam with 4,700 employees, takes a great role to activate the regional economy.
President Hwang Chang-gyu pronounced their future plan: “Not satisfied with this current position, we will do our best to secure leadership in the mobile and digital markets, now rapidly growing, and become born again as a comprehensive semiconductor manufacturer of the worldwide top class.”




Hwang Chang-gyu, President of Electronics Business of Samsung Electronics

Hwang Chang-gyu, President of Electronics Business of Samsung Electronics, entered Samsung Electronics in 1989 and then obtained a seat on the board of directors at the end of 1991. He took charge of 256M DRAM development, a long-cherished project then. At last he succeeded to develop 256M DRAM in 1994. And then anticipating an expansion of NAND Flash memory market, he commenced to develop 16Gb NAND Flash memory technique in 2005, through which he demonstrated again “Hwang’s Law’ asserted by him that a semiconductor integration is doubled per year, making the world astonished.